By Karl Schneider
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Additional resources for Broadband Amplifiers for High Data Rates using InP InGaAs Double Heterojunction Bipolar Transistors
The transfer length of a metal semiconductor contact is the length over which the current transfers from metal to semiconductor. In general, this length is longer for contacts displaying a high contact resistance and very short for contacts with negligible contact resistance . Therefore, if the base contact width is smaller than the transfer length of the base metal contact, the parasitic base resistance RB will increase. This would result in a decrease of fmax , even though fT might rise. Hence, WB should not be smaller than the transfer length of the contact.
A shorter collector is also likely to result in a lower breakdown voltage. 1 V and a reduction is acceptable. A comparison of the breakdown voltages of all layer structures investigated, is presented in Sec. 4. Considering the arguments above, the all over collector length was reduced from 240 nm in structure A to 150 nm in structure B. As no current blocking could be observed in structure A, the moderately doped InP layer adjacent to the InGaAsP step grading was replaced by a lightly doped InP collector layer (compare Figs.
1 mA/μm2 reaching fT and fmax values of 150 and 210 GHz, respectively. Discussion The results demonstrate, that this ﬁrst structure displays desirable features needed for the design of high-speed circuits. The maximum frequency of oscillation fmax exceeds 200 GHz and the current gain has an acceptable value of 39. From the process point of view, the low leakage currents in the Gummel plot present a good result. Nevertheless there are several points, which need to be improved. First, fT should also exceed 200 GHz.