Deep-Submicron CMOS ICs: From Basics to ASICs by Harry Veendrick

By Harry Veendrick

These days, CMOS applied sciences account for nearly ninety% of all built-in circuits (ICs). This booklet offers an important creation to CMOS ICs. The contents of this ebook are established upon a prior ebook, entitled 'MOS Ics', which used to be released in Dutch and English via Delta Press (Amerongen, The Netherlands, 1990) and VCH (Weinheim, Germany, 1992), respectively.
This ebook includes state of the art fabric, but in addition makes a speciality of elements of scaling as much as and past 0.1 mm CMOS applied sciences and designs. It essentially describes the elemental CMOS working ideas and provides mammoth perception into a number of features of layout, implementation and alertness. not like different works in this subject, the publication explores all linked disciplines of deep-submicron CMOS ICs, together with physics, layout, know-how and packaging, low-power layout and sign integrity. The textual content relies upon in-house Philips courseware, which, thus far, has been accomplished by way of greater than 1500 engineers. rigorously based and enriched by way of enormous quantities of figures, photograhs and in-depth workouts, the booklet is well-suited for the aim of self-study.
This moment variation includes a few corrections and is totally up to date with recognize to the former one. within the one-and-a-half years of its existance, the 1st version has already been utilized in greater than ten in-house classes. a number of typing error etc, which confirmed up in the course of those classes, were corrected. additionally, many of the chapters were up-to-date with cutting-edge fabric. Numbers that describe developments and roadmaps were up-to-date to boot, to enable the contents of this publication be beneficial for a minimum of one other 5 years.

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___ ,8 8 8 8 8 8 -----------.... e. Vds> Vgs - VT The voltage Vx at the end point x of the inversion layer equals Vgs - VT . Therefore, VT is the voltage difference between the gate and channel at position x. If this pinch-off point is considered to be the imaginary drain of the transistor, then Ids is determined by the voltage Vx = Vgs - VT. In other words, the drain current in the saturation region equals the drain current at the transition point between the linear and saturation regions.

Aluminium or molybdenum, or a heavily doped and thus low-ohmic polycrystalline silicon layer. Normally, the source and drain areas are also heavily doped to minimise series resistance. Jm 4 wide track is 120 • R o , where Ro is the sheet resistance of the track material. The sheet resistance of the source and drain areas usually ranges from 3 to 100 0/0. ) is between 1023 - 1024 atoms per m 3 . A p-channel transistor differs from the above n-channel type in that it contains a p + source and drain in an n-type substrate.

B. Vg causes the following change in channel charge: +Cg . b. Vg = 7 X 10- 3 • W . L . b. Vg 2 W . L . tcond . p Thus: 7 10- 3 . b.. n I 10 16 . b.. 4 1016 tcond . n X 10 Examination of two materials reveals the implications of this expression for tcond: Case a The channel material is copper. 4 X 10- 13 m. The required channel thickness is thus less than the size of one atom (~ 3 x 10- 10 m). This is impossible to realise and its excessive number of free carriers renders copper unsuitable as channel material.

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